Nanotechnology Community
Nanotechnology Community

Anatoliy Dvurechenskii

Deputy Director
Siberian Branch of Russian Academy of Science
Institute of Semiconductor Physics


Some Recent Publications

1. A. V. Dvurechenskii, J.V. Smagina, R.Groetzschel, V.A. Zinoviev, V.A. Armbrister, P.L. Novikov, S.A. Teys, A.K. Gutakovskii. Ge/Si quantum dot nanostructures grown with low-energy ion beam-epitaxy.- Surface & Coating Technology V.196, No. 1-3, 25-29 (2005).
2. A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov. Germanium Self-Assembled Quantum Dots in Silicon: Growth, Electronic Transport, Optical Phenomena, and Devices (Review). – in: Handbook of Semiconductor Nanostructures and Nanodevices, Volume 1, edited by A.A. Balandin and K.L. Wang (American Scientific Publishers, NY), p. 33-102, 2006.
3. A.V. Dvurechenskii, P.L. Novikov, Y. Khang, Zh.V. Smagina, V.A. Armbrister, V.G. Kesler, A.K. Gutakovskii. Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on SiO2 films, Proc. SPIE, 2006, v.6260, p.626006-626006A-8.
4. E.I. Gatskevich, G.D. Ivlev, V.A. Volodin, A.V. Dvurechenskii, M.D. Efremov, A.I. Nikiforov, A.I. Yakimov. Pulsed laser annealing of Ge/Si heterostructures with quantum dots. – in: Physics, Chemistry and Application of Nanostructures, edited by V.E. Borisenko, S.V. Gaponenko and V.S. Gurin (World Scientific Publishing Co. Ltd., Singapore, 2007), p. 435-438.
5. A.V. Dvurechenskii, A.I. Yakimov, N.P. Stepina, V.V. Kirienko, P.L. Novikov. SiGe nanodots in electro-optical SOI devices. - In: Nanoscaled Semiconductor-on-Insulator Structures and devices, ed. S. Hall, Springer, 2007, p. 113-128.
6. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Enhanced oscillator strength of interband transitions in coupled Ge/Si quantum dots. – Applied Physics Letters, 2008, v. 93, № 13, p. 132105.
7. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Asymmetry of single-particle hole states in a strained Ge/Si double quantum dots. – Phys. Rev. B, 2008, v. 78, № 16, p. 165310.
8. A.F. Zinoveva, A.V. Dvurechenskii, N.P. Stepina, A.S. Deryabin, A.I. Nikiforov. R. Rubinger, N.A. Sobolev, J.P. Leitão, M.C. Carmo. Spin resonance of electrons localized on Ge/Si quantum dots. - Phys. Rev. B, 2008, v. 77, p. 115319.
9. J.V. Smagina, P.L. Novikov, V.A. Armbrister, V.A. Zinoviev, A.V. Nenashev, A.V. Dvurechenskii. Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation – Physica B, 2009, v. 404, 4712–4715.
10. N.P. Stepina, E.S. Koptev, A.V. Dvurechenskii, and A.I. Nikiforov. Strong to weak localization transition and two-parameter scaling in a two-dimensional quantum dot array. - Phys. Rev. B, 2009, v. 80, 125308.
11. A.V. Nenashev, F. Jansson, S.D. Baranovskii, R. Osterbacka, A.V. Dvurechenskii, F. Gebhard. Role of diffusion in two-dimensional bimolecular recombination. Appl. Phys.Lett., 2010, V. 96, No. 21, 213304.
12. A.V. Nenashev, A.V. Dvurechenskii. Strain distribution in quantum dot of arbitrary polyhedral shape: Analytical solution. J. Appl. Phys., 2010, V. 107, No. 6, 064322.
13. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Calculating the energy spectrum and electronic structure of two holes in a pair of strained Ge/Si quantum dots. – Phys. Rev. B, 2010, 81, № 11, 115434.
14. A.F. Zinovieva, A.V. Dvurechenskii, N.P. Stepina, A.I. Nikiforov, A.S. Lyubin, L.V. Kulik. Direct measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arrays, Phys. Rev. B. 2010, V.81, 113303.


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