Nanotechnology Community
Nanotechnology Community
TSSh

Timur S. Shamirzaev

Leading Researcher, Sc.D in Condensed Matter Physics
Luminescence study group
A.V. Rzhanov Institute of Semiconductor Physics Siberian branch of the RAS

Research Interests

Spintronics, Excitons in QDs

Publications

T.S. Shamirzaev, A.M. Gilinsky, A.K. Kalagin, A.V. Nenashev, and K.S. Zhuravlev "Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix: Photoluminescence spectra and band-structure calculations" Physical Review B 2007 v.76, 155309

T.S. Shamirzaev, A.V. Nenashev, K.S. Zhuravlev "Coexistence of direct and indirect band structures in arrays of InAs/AlAs quantum dots" Appl.Phys.Lett., 2008 v. 92, 213101

T.S. Shamirzaev, A.V. Nenashev, A.K. Gutakovskii, A.K. Kalagin, K.S. Zhuravlev, M. Larsson, P.O. Holtz "Atomic and energy structure of InAs/AlAs quantum dots" Physical Review B 2008 v.78, 085323.

T.S. Shamirzaev, D.S. Abramkin, A.V. Nenashev, K.S. Zhuravlev, F. Trojanek, B. Dzurnak and P. Maly "Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots" Nanotechnology, 2010, v.21, 155703.

T.S. Shamirzaev, D.S. Abramkin, A.K. Gutakovskii, and M.A. Putyato "High quality relaxed GaAs quantum dots in GaP matrix" Appl. Phys.Lett. 2010 v.97, 023108.

T.S. Shamirzaev, D.S. Abramkin, D.V. Dmitriev, A.K. Gutakovskii "Nonradiative energy transfer between vertically coupled indirect and direct bandgap InAs quantum dots", Appl. Phys.Lett. 2010, v.97, 263102

T. S. Shamirzaev, J. Debus, D. S. Abramkin, D. Dunker, D. R. Yakovlev, D. V. Dmitriev, A. K. Gutakovskii, L. S. Braginsky, K. S. Zhuravlev, and M. Bayer "Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type I band alignment", Phys. Rev. B 2011, 84, 155318

T.S. Shamirzaev, D.S. Abramkin, A.K. Gutakovskii, M.A. Putyato, "Novel self-assembled quantum dot in the GaSb/AlAs heterosystem" JETP Letters, 2012, v.95, 534

D. Dunker, T. S. Shamirzaev, J. Debus, D. R. Yakovlev, K.S. Zhuravlev, M. Bayer "Spin relaxation of negatively charged excitons in (In,Al)As/AlAs quantum dots with indirect band gap and type-I band alignment" Appl. Phys. Lett., 2012, v.101, 142108

D.S. Abramkin, M. A. Putyato, S. A. Budennyy, A. K. Gutakovskii, B. R. Semyagin, V. V. Preobrazhenskii, O. F. Kolomys, V. V. Strelchuk, T. S. Shamirzaev "Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures" J. Appl. Phys., 2012, 112, 083713.

N.G. Galkin, E.A. Chusovitin, D.L. Goroshko, A.V. Shevlyagin, A.A. Saranin, T.S. Shamirzaev, K.S. Zhuravlev, and A.V. Latyshev "Room temperature 1.5 mm light-emitting silicon diode with embedded b-FeSi2 nanocrystallites" Appl. Phys. Lett., 2012, v.101, 163501.

J. Debus, T.S. Shamirzaev, D. Dunker, V. F. Sapega, E. L. Ivchenko, D. R. Yakovlev, A. I. Toropov, and M. Bayer "Spin-flip Raman scattering of the G-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots" Phys. Rev. B 90, 125431 (2014).

T. S. Shamirzaev, J. Debus, D. R. Yakovlev, M. M. Glazov, E. L. Ivchenko, and M. Bayer "Dynamics of exciton recombination in strong magnetic fields in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment" Phys. Rev. B 94, 045411 (2016).

T.S. Shamirzaev, J. Rautert, D. R. Yakovlev, J. Debus, A. Yu. Gornov, M. M. Glazov, E. L. Ivchenko, M. Bayer. «Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment» Phys. Rev. B 96, 035302-15 (2017).

V.Yu.Ivanov, T.S. Shamirzaev, D.R. Yakovlev, A.K. Gutakovskii, L. Owczarczyk, M. Bayer. Optically detected magnetic resonance of photoexcited electrons in (In,Al)As/AlAs quantum dots with indirect band gap and type-I band alignment, Phys. Rev. B 97, 245306-6 (2018).

D. S. Abramkin, A.K. Gutakovskiy, T.S. Shamirzaev, Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type, Journal of Applied Physics, 123, 115701-11 (2018).

L.I. Fedina, A.K. Gutakovskiy, T.S. Shamirzaev, On the structure and photoluminescence of dislocations in silicon, Journal of Applied Physics, 124, 053106-6 (2018).

T. S. Shamirzaev, J. Rautert, D. R. Yakovlev, M. M. Glazov, and M. Bayer, Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells Phys. Rev. B 99, 155301-10 (2019).

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