Publications
1. Alireza Samavati, Zulkafli Othaman, Sib Krishna Ghoshal, Mohammad Reza Dousti and Mohammed Rafiq Abdul Kadir, “Substrate Temperature Dependent Surface Morphology and Photoluminescence of Germanium Quantum Dots Grown by Radio Frequency Magnetron Sputtering”, International Journal of Molecular Sciences, (2012), 13, 12880-12889.
2. ALIREZA Samavati, Z. Othaman, S. K. Ghoshal, M. R. Dousti, R. J. Amjad, “Structural and Optical Behavior of Germanium Quantum Dots”, Chinese Physics Letter, Vol. 29, No. 11 (2012) 118101 .
3. Alireza Samavati, Zulkafli Othaman, Sib Krishna Goshal, “TIME DEPOSITION DEPENDENT SURFACE MORPHOLOGY AND PHOTOLUMINESCENCE OF Ge NANOISLANDS”, CHALCOGENIDE LETTERS Volume: 9 Issue: 5 Pages: 223-229, MAY 2012
4. Alireza Samavati, S. K. Ghoshal, Z. Othaman, “Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron”, Chinese Physics Letter, Vol. 29, No. 4 (2012) 048101.
5. Alireza Samavati, Sib Krishna Goshal, Zulkafli Othaman, “Influence of Annealing on Structural and Optical Properties of Germanium Quantum Dots”, Journal of Ovonic Research, Vol. 8, No. 2, March - April 2012, p. 21 – 27.
6. Alireza Samavati, Fatima Aldaw, Sib Krishna Goshal, Zulkafli Othaman, Samsudi Sakrani, “Light Emitting Germanium and Silicon Nanoislands Grown by RF Magnetron Sputtering”, Journal of Ovonic Research, Vol. 8, No. 3, May - June 2012, p. 65 - 72.
7. Samsudi Sakrani, Fatima Aldaw Idrees, Yussof Wahab, Zulkafli Othaman and Imam Sumpono,”Photoluminescence Studies of Silicon Self-Assembled Quantum Dots”, Advanced Materials Research, Vol. 501 (2012) pp 209-213.
8. Samsudi Sakrani, Ahmad Radzi Mat Isa, Zulkafli Othaman, Abd Khamim Ismail, Yussof Wahab, and Fatima Aldaw Idrees, “Interdependencies of critical radius, critical energy and surface energy (CRESE) in silicon self-assembled nanodots”, Advanced Materials Research, Vol. 501 (2012) pp 189-193.
9. Rosnita M, Yussof W., Zuhairi I., Zulkafli O, Samsudi S, “Initial Stages of GaAs/Au Eutectic Alloy Formation for the Growth of GaAs Nanowires”, Sains Malaysiana Vol 41 No. 9, Sep 2012, pp 1133 – 1138.
10. Hamidinezhad, H., Wahab, Y., Othaman, Z., Ismail, A.K., “Au-Catalyzed Silicon Nanoneedles Synthesized from Pure Silane Gas at Various RF Powers on Silicon Substrate by VHF-PECVD”, Plasmonics 6 (4) , pp. 791-796, 2011.
11. Habib Hamidinezhad, Yussof Wahab, Zulkafli Othaman, Abd Khamim Ismail, “Influence of Growth Time on Morphology and Structural Properties of Silicon Nanowires Grown by VHF-PECVD”, Journal of Crystal Growth, Vol. 332 No 1, 7 – 11 (2011).
12. Habib Hamidinezhad, Yussof Wahab, Zulkafli Othaman, Abd Khamim Ismail, “Synthesis and Analysis of Silicon Nanowire Below Si-Au Eutectic Temperatures Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition”, Applied Surface Science, Vol. 257, No. 21, 9188-9192 (2011).
13. Habib Hamidinezhad, Yussof Wahab, Zulkafli Othaman, “Ultra-sharp Pointed Tip Si Nanowires Produced by Very High Frequency Plasma Enhanced Chemical Vapor Deposition via VLS Mechanism”, Journal of Materials Science, Vol. 46, 5085-5089 (2011).\
14) The effect of In0.1Ga0.9As underlying layer on the structural properties\nof self-assembled In0.5Ga0.5As quantum dots, NANO: Brief Reports and Reviews, Vol. 6, No. 2 (2011) 153–157, World Scientific Pub. Co.
15) Morphology & Chemical Composition of InxGa1-xAs NWs Au assisted grown at low growth temperature using MOCVD, Journal of Applied Sciences, 11(7); 1315-1320, 2011.
16) Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism, J Mater Sci, Springer Mar 2011.
17) The advantage of low growth temperature and V/III ratio for InxGa1−xAs nanowires growth, NANO: Brief Reports and Reviews, Vol. 6, No. 2 (2011) 159–165, World Scientific Publishing Company
18) Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition, Applied Surface Science, Volume 257, Issue 21, 15 August 2011, Pages 9188-9192
19) Influence of growth time on morphology and structural properties of silicon nanowires grown by VHF-PECVD, Journal of Crystal Growth, Volume 332, Issue 1, 1 October 2011, Pages 7-11 \n